1996 Jul 30
8
NXP Semiconductors
Product specification
N-channel silicon field-effect transistors BF245A; BF245B; BF245C
Fig.16 Input capacitance as a function of
gate-source voltage; typical values.
VDS
=20V; f=1MHz; Tamb
=25?C.
handbook, halfpage6
0
4
2
0
?2
?10
MGE777
?4
?6
?8
VGS
(V)
Cis
(pF)
typ
Fig.17 Reverse transfer capacitance as a function
of gate-source voltage; typical values.
VDS
=20V; f=1MHz; Tamb
=25?C.
handbook, halfpage1.5
0.5
0
?10
MGE781
1
Crs
(pF)
?2
?4
?6
?8
VGS
(V)
typ
Fig.18 Forward transfer admittance as a function of
drain current; typical values.
handbook, halfpage
8
6
0
0
MGE791
4
2
|yfs|
(mA/V)
ID
(mA)
20
10 15
5
BF245A
BF245B
BF245C
VDS
=15V; f=1kHz; Tamb
=25?C.
Fig.19 Gate-source cut-off voltage as a function of
drain current; typical values.
VDS
=15V; Tj
=25?C.
handbook, halfpage?10VGSoff
?0BF245A
01020
30
MGE784
?2
?4
?6
(V)?8
IDSS
at V
GS
= 0 (mA)
at ID
= 10 nA
BF245B
BF245C
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相关代理商/技术参数
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制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 30V V(BR)DSS | 500UA I(DSS) | TO-92VAR
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BF245A/B/C
制造商:未知厂家 制造商全称:未知厂家 功能描述:N-Channel Silicon Field Effect Transistors
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制造商:未知厂家 制造商全称:未知厂家 功能描述:JFET VHF/UHF Amplifiers
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功能描述:JFET N-Channel Transistor RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
BF245A_D75Z
功能描述:JFET N-Channel Transistor RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel
BF245A_D75Z_Q
功能描述:JFET N-Channel Transistor RoHS:否 制造商:ON Semiconductor 晶体管极性:N-Channel 漏极电流（Vgs=0 时的 Idss）:50 mA 漏源电压 VDS:15 V 闸/源击穿电压: 漏极连续电流:50 mA 配置: 安装风格: 封装 / 箱体:SC-59 封装:Reel